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Paper Titles
Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351
Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
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Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
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Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces
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Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
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Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry
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Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation
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SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal
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Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates

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Abstract:

On 4H-SiC Si-face substrates after H2 etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane dislocation (BPD). Use of the substrate with the lowest BPD density will be effective to reduce bunched-step line that would affect oxide layer reliability on an epitaxial layer. However, more detail investigation needs to classify the BPD that would become a starting point of bunched-step line.

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Silicon Carbide and Related Materials 2014 View Preview

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.367

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Online since:

June 2015

Authors:

Kentaro Tamura*, Masayuki Sasaki, Chiaki Kudou, Tamotsu Yamashita, Hideki Sako, Hirokuni Asamizu, Sachiko Ito, Kazutoshi Kojima, Makoto Kitabatake

Keywords:

Chemical Vapor Deposition (CVD), Confocal Microscopy, Epitaxy, Off-Angle, Step Bunching

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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