High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Daniel J. Lichtenwalner; Lin Cheng; Sarit Dhar; Anant K. Agarwal; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.821-823.749

Paper Titles

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects
p.733

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation
p.737

Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide
p.741

Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)
p.745

High-Mobility SiC MOSFETs with Chemically Modified Interfaces
p.749

Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides
p.753

Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs
p.757

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
p.761

CIMOSFET: A New MOSFET on SiC with a Superior R_on·Q_gdFigure of Merit
p.765

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823High-Mobility SiC MOSFETs with Chemically Modified...

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Abstract:

Alkali (Rb, Cs) and alkaline earth elements (Sr, Ba) provide SiO₂/SiC interface conditions suitable for obtaining high metal-oxide-semiconductor field-effect-transistor (MOSFET) channel mobility on the 4H-SiC Si-face (0001), without the standard nitric oxide (NO) anneal. The alkali elements Rb and Cs result in field-effect mobility (μ_FE) values >25 cm²/V^.s, and the alkaline earth elements Sr and Ba resulted in higher μ_FE values of 40 and 85 cm²/V^.s, respectively. The Ba-modified MOSFETs show a slight decrease in mobility with heating to 150 °C, as expected when mobility is not interface-trap-limited, but phonon-scattering-limited. The interface state density is lower than that obtained with nitric oxide (NO) passivation. Devices with a Ba interface layer maintain stable mobility and threshold voltage under ±2 MV/cm gate bias stress at 175 °C, indicating no mobile ions.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

749-752

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.749

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Online since:

June 2015

Authors:

Daniel J. Lichtenwalner*, Lin Cheng, Sarit Dhar, Anant K. Agarwal, Scott Allen, John W. Palmour

Keywords:

Metal-Oxide-Semiconductor (MOS), Mobility, MOSFET

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