Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

Yukimune Watanabe; Noriyasu Kawana; Tsuyoshi Horikawa; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.821-823.733

Paper Titles

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
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Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations
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Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects
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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation
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Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide
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High-Mobility SiC MOSFETs with Chemically Modified Interfaces
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Electrical Characterization of 3C-SiC Lateral...

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

Abstract:

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm²/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

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Materials Science Forum (Volumes 821-823)

Pages:

733-736

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.733

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Online since:

June 2015

Authors:

Yukimune Watanabe*, Noriyasu Kawana, Tsuyoshi Horikawa, Kiichi Kamimura

Keywords:

3C-SiC, Heteroepitaxial Film, Lateral MOSFET

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