Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)

Hironori Yoshioka; Junji Senzaki; Atsushi Shimozato; Yasunori Tanaka; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.745

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Characterization of Interface State Density from...

Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)

Abstract:

We have evaluated interface state density (D_IT) for E_C−E_T > 0.00 eV from the subthreshold slope deterioration of MOSFETs at low temperatures. We have compared two n-channel MOSFETs on the C- and a-faces with the gate oxide formed by pyrogenic oxidation followed by annealing in H₂. The peak field-effect mobility (µ_FE,peak) for the C-face MOSFET was 57 cm²V^-1s^-1 at 300 K, which is lower than the half of 135 cm²V^-1s^-1 for the a-face MOSFET. We have shown that D_IT very close to E_C can well explain why µ_FE for C-face MOSFETs is lower than that for a-face MOSFETs. The value of D_IT at 0.00 eV corresponding to the subthreshold slope at 11 K was 1.6×10¹⁴ cm^-2eV^-1 for the C-face MOSFET, which is more than the double of 6.4×10¹³ cm^-2eV^-1 for the a-face MOSFET.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.745

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Online since:

June 2015

Authors:

Hironori Yoshioka*, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura

Keywords:

Field-Effect Mobility, Interface State, MOSFET, Pyrogenic Oxidation, Subthreshold Slope

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