Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations

Cheng Tyng Yen; Hsiang Ting Hung; Chien Chung Hung; Chwan Ying Lee; Lurng Shehng Lee; Yao Feng Huang; Tzu Ming Yang; Chi Yin Cheng

doi:10.4028/www.scientific.net/MSF.821-823.729

Paper Titles

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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
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Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator
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Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations
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Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects
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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation
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Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide
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Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)
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Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations

Abstract:

The influences of positive fixed oxide charges and donor-like interface traps on breakdown voltages of SiC devices with FGR and JTE terminations were studied. The breakdown voltages of devices with both FGR and JTE terminations were found to degrade when the level of fixed oxide charges overs 1×10¹² cm^-2 due to enhancement of junction curvature by fixed oxide charges. The introduction of donor-like interface traps at the interface shows similar behaviors as fixed positive charges, suggested that both fixed oxide charges and interface traps should be taken into account when one optimizes device designs and processes.