Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

Fatima Issa; Laurent Ottaviani; Vanessa Vervisch; Dora Szalkai; Ludo Vermeeren; A. Lyoussi; Andrej Kuznetsov; Mihai Lazar; Axel Klix; Olivier Palais; R. Ferone; Anders Hallén

doi:10.4028/www.scientific.net/MSF.821-823.875

Paper Titles

High Temperature CMOS Circuits on Silicon Carbide
p.859

Simulations of Interactions between Fast Neutrons and 4H-SiC Detectors
p.863

SiC UV Detectors under Heavy Ions Irradiation
p.867

High Voltage Wide Bandgap Photoconductive Switching
p.871

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
p.875

Development of SiC Power Module and Loss Evaluation in DC-DC Converter Circuit Application
p.879

Full SiC DCDC-Converter with a Power Density of more than 100kW/dm³
p.884

Comparison of Turn-Off Strategies for SiC Thyristors
p.889

High Current (1225A) Optical Triggering of 18-kV 4H-SiC Thyristor in Purely Inductive Load Circuit
p.893

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Study of the Stability of 4H-SiC Detectors by...

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

Abstract:

Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of ¹⁰B inside the aluminum metallic contact. The first detector shows a high leakage current after ¹⁰B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2014

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

875-878

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.875

Citation:

Cite this paper

Online since:

June 2015

Authors:

Fatima Issa*, Laurent Ottaviani, Vanessa Vervisch, Dora Szalkai, Ludo Vermeeren, A. Lyoussi, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, R. Ferone, Anders Hallén

Keywords:

4H-SiC, Ion Implantation, Leakage Current, Neutron Converter Layer, pn Diodes, Thermal Neutrons

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Amharrak, J. Di Salvo, A. Lyoussi, A. Roche, M. Masson-Fauchier, J. C. Bosq, and M. Carette, in 2011 2nd Int. Conf. Adv. Nucl. Instrumentation, Meas. Methods Their Appl. (IEEE, 2011), p.1–9.

DOI: 10.1109/animma.2011.6172901

Google Scholar

[2] D. Fourmentel, C. Reynard-Carette, A. Lyoussi, J. F. Villard, J. Y. Malo, M. Carette, J. Brun, P. Guimbal, and Y. Zerega, IEEE Trans. Nucl. Sci. 60, 328 (2013).

DOI: 10.1109/tns.2012.2232304

Google Scholar

[3] F. Nava, G. Bertuccio, A. Cavallini, and E. Vittone, Meas. Sci. Technol. 19, 102001 (2008).

DOI: 10.1088/0957-0233/19/10/102001

Google Scholar

[4] A. R. Dulloo, F. H. Ruddy, J. G. Seidel, J. M. Adams, J. S. Nico, and D. M. Gilliam, Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip. 422, 47 (1999).

Google Scholar

[5] A. Lyoussi and al:, I _SMART a Collaborative Project on Innovative Sensor for Material Ageing and Radiation Testing: European Innovative Project for SiC Applications in Harsh Media. KIC_Innoenergy, CCAV, I_SMART Proposal/Exhibit 1 (2012).

Google Scholar

[6] F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, A. Lyoussi, A. Kuznetsov, M. Lazar, A. Klix, O. Palais, and A. Hallen, IEEE Trans. Nucl. Sci. 61, 2105 (2014).

DOI: 10.1109/tns.2014.2320943

Google Scholar

[7] F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, A. Lyoussi, A. Kuznetsov, M. Lazar, A. Klix, O. Palais, and A. Hallén, in Fifteenth Int. Symp. React. Dosim. (2014).

DOI: 10.1051/epjconf/201610605004

Google Scholar