SiC UV Detectors under Heavy Ions Irradiation

Evgenia V. Kalinina; Alexander A. Lebedev; Baptiste Berenguier; Laurent Ottaviani; Vladimir A. Skuratov

doi:10.4028/www.scientific.net/MSF.821-823.867

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823SiC UV Detectors under Heavy Ions Irradiation

SiC UV Detectors under Heavy Ions Irradiation

Abstract:

4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x10⁹ cm^-2. Comparative studies of the optical and electrical properties of initial and irradiated structures with Schottky barriers were carried out in temperature range 23-180°C. Swift heavy ion stimulated changes in photosensitivity and electrical characteristics of the initial and irradiated detectors are explained in terms of the fluctuation traps model with the subsequent thermal dissociation.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

867-870

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.867

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Online since:

June 2015

Authors:

Evgenia V. Kalinina*, Alexander A. Lebedev, Baptiste Berenguier, Laurent Ottaviani, Vladimir A. Skuratov

Keywords:

Detector, Heavy Ions, Quantum Efficiency, Radiation, Ultraviolet

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References

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