Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

Tetsuya Miyazawa; Koji Nakayama; Atsushi Tanaka; Katsunori Asano; Shi Yang Ji; Kazutoshi Kojima; Yuuki Ishida; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.821-823.851

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Growth and Characterization of Thick Multi-Layer...

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

Abstract:

Thick multi-layer 4H-SiC epitaxial growth was investigated for very high-voltage Si-face p-channel insulated gate bipolar transistors (p-IGBTs). The multi-layer included n⁺ buffer, p⁺ field stop, and thick p^- drift layers. Two processes were employed to enhance the carrier lifetime of the p^- drift layer: carbon ion implantation/annealing and hydrogen annealing, and the enhanced carrier lifetime was confirmed by the open-circuit voltage decay measurement. Using the grown thick multi-layer 4H-SiC, simple pin diodes were fabricated instead of p-IGBTs to demonstrate efficient conductivity modulation in the thick p^- drift layer. While the on-state voltage was high at room temperature, it decreased significantly at elevated temperatures, and attained 3.5 V at 100 A/cm² at 200°C for the diode with the carrier lifetime enhancement processes, indicating sufficient conductivity modulation.

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Materials Science Forum (Volumes 821-823)

Pages:

851-854

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.851

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Online since:

June 2015

Authors:

Tetsuya Miyazawa*, Koji Nakayama, Atsushi Tanaka, Katsunori Asano, Shi Yang Ji, Kazutoshi Kojima, Yuuki Ishida, Hidekazu Tsuchida

Keywords:

4H-SiC, Carrier Lifetime, Epitaxial Growth, High Voltage, IGBT

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