27 kV, 20 A 4H-SiC n-IGBTs

Edward van Brunt; Lin Cheng; Michael J. O'Loughlin; Jim Richmond; Vipindas Pala; John W. Palmour; Charles W. Tipton; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.821-823.847

Paper Titles

Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
p.830

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges
p.834

4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
p.838

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
p.842

27 kV, 20 A 4H-SiC n-IGBTs
p.847

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
p.851

Silicon Carbide Nanowire Devices for Label-Free Electrical DNA Detection
p.855

High Temperature CMOS Circuits on Silicon Carbide
p.859

Simulations of Interactions between Fast Neutrons and 4H-SiC Detectors
p.863

HomeMaterials Science ForumMaterials Science Forum Vols. 821-82327 kV, 20 A 4H-SiC n-IGBTs

27 kV, 20 A 4H-SiC n-IGBTs

Abstract:

In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination. Prior to the device fabrication, an ambipolar carrier lifetime of greater than 10 μs was measured on both drift regions by the microwave photoconductivity decay (μPCD) technique. The SiC n-IGBTs exhibit an on-state voltage of 11.8 V at a forward current of 20 A and a gate bias of 20 V at 25 °C. The devices have a chip size of 0.81 cm² and an active conducting area of 0.28 cm². Double-pulse switching measurements carried out at up to 16 kV and 20 A demonstrate the robust operation of the device under hard-switched conditions; coupled thermal analysis indicates that the devices can operate at a forward current of up to 10 A in a hard-switched environment at a frequency of more than 3 kHz and a bus voltage of 14 kV.