Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

Arash Salemi; Hossein Elahipanah; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.821-823.834

Paper Titles

Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
p.818

Improvement of the Current Gain Stability of SiC Junction Transistors
p.822

Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors
p.826

Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
p.830

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges
p.834

4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
p.838

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
p.842

27 kV, 20 A 4H-SiC n-IGBTs
p.847

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
p.851

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Investigation of the Breakdown Voltage in High...

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

Abstract:

Ion implantation in silicon carbide (SiC) induces defects during the process. Implantation free processing can eliminate these problems. The junction termination extension (JTE) can also be formed without ion implantation in SiC bipolar junction transistor (BJT) using a well-controlled etching into the epitaxial base layer. The fixed charges at the SiC/SiO₂ interface modify the effective dose of the JTEs, leakage current, and breakdown voltage. In this paper the influence of fixed charges (positive and negative) and also interface trap density at the SiC/SiO₂ interface on the breakdown voltage in 4.5 kV 4H-SiC non-ion implanted BJT have been simulated. SiO₂ as a surface passivation layer including interface traps and fixed charges has been considered in the analysis. Simulation result shows that the fixed charges influence the breakdown voltage significantly more than the interface traps. It also shows that the positive fixed charges reduce the breakdown voltage more than the negative fixed charges. The combination of interface traps and fixed charges must be considered when optimizing the breakdown voltage.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

834-837

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.834

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Online since:

June 2015

Authors:

Arash Salemi*, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling

Keywords:

Bipolar Junction Transistor (BJT), Fixed Charges, Implantation Free, Interface Trap, Junction Termination Extension (JTE), Oxide

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