Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module

Abstract:

The characteristics of a 1200 V and 800 A bipolar junction transistor (BJT) power module has been measured, simulated and verified for the first time in the PSPICE platform. The simulation model is based on a silicon carbide (SiC) Gummel-Poon model for high power applications. The implemented model has been extended with temperature dependent equations in order to extend the BJT operating temperature range. PSPICE simulations are performed to extract technology dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 830-833
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.830
• Online since: June 2015
• Authors: Daniel Johannesson*, Muhammad Nawaz
• Keywords: 4H-SiC, 4H-SiC BJT, Device Modeling, Device Simulation, PSpice

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