Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Thibaut Chailloux; Cyril Calvez; Dominique Tournier; Dominique Planson

doi:10.4028/www.scientific.net/MSF.821-823.814

Paper Titles

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
p.797

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
p.801

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
p.806

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
p.814

Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
p.818

Improvement of the Current Gain Stability of SiC Junction Transistors
p.822

Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors
p.826

Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
p.830

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Characterization and Comparison of 1.2kV SiC Power...

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Abstract:

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

814-817

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.814

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Online since:

June 2015

Authors:

Thibaut Chailloux*, Cyril Calvez, Dominique Tournier, Dominique Planson

Keywords:

Bipolar Junction Transistor (BJT), Cryogenic Temperature, High Temperature, Junction Field Effect Transistor (JFET), MOSFET

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References

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