Short-Circuit Capability Exploration of Silicon Carbide Devices

Maxime Berthou; Dominique Planson; Dominique Tournier

doi:10.4028/www.scientific.net/MSF.821-823.810

Paper Titles

4H-SiC VJFETs with Self-Aligned Contacts
p.793

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
p.797

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
p.801

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
p.806

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
p.814

Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
p.818

Improvement of the Current Gain Stability of SiC Junction Transistors
p.822

Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors
p.826

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Short-Circuit Capability Exploration of Silicon...

Short-Circuit Capability Exploration of Silicon Carbide Devices

Abstract:

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.