Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET

Shi Niu; Maxime Berthou; Dominique Tournier

doi:10.4028/www.scientific.net/MSF.821-823.797

Paper Titles

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design
p.781

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
p.785

VLS Grown 4H-SiC Buried P⁺ Layers for JFET Lateral Structures
p.789

4H-SiC VJFETs with Self-Aligned Contacts
p.793

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
p.797

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
p.801

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
p.806

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
p.814

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Bulk Thickness and Short Circuit Capacity of a...

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET

Abstract:

In many power electronic inverters, the gate drive failure may put the switch normally-on in short-circuit (SC) risk. The high power density generated thus leads rapidly to the transistor failure. This paper presents our study via electro-thermal simulation of a 1200 V JFET under short circuit. It provides deep insight of physical phenomena present in the JFET during the short-circuit and will allow further improvements and understanding of it.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

797-800

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.797

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Online since:

June 2015

Authors:

Shi Niu*, Maxime Berthou, Dominique Tournier

Keywords:

Electro-Thermal Simulation, Heat Capacity, Junction Field Effect Transistor (JFET), Short Circuit

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References

[1] Mousa R., Planson D. et al, High temperature characterization of SiC JFET and modeling, European Conference on Power Electronics and Applications, (2007).

DOI: 10.1109/epe.2007.4417501

Google Scholar

[2] Handt K., Griepentrog G., Maier R., Intelligent, Compact and Robust Semiconductor Circuit Breaker Based on Silicon Carbide Devices, Power Electronics Specialist Conference, (2008).

DOI: 10.1109/pesc.2008.4592166

Google Scholar

[3] Buttay, C. et al, State of the art of high temperature power electronics, Materials Science and Engineering B, pp.283-288, (2010).

Google Scholar

[4] Bouarroudj-Berkani, M. and et al, Failure modes and robustness of SiC JFET transistors under current limiting operations, Power Electronics and Applications (EPE 2011), pp.1-10, Aug (2011).

Google Scholar

[5] Weiss B., Braun M., Friedrichs P., Turn-off and short circuit behaviour of 4H-SiC JFETs, IAS Annual Meeting, vol. 1, pp.365-369, (2001).

DOI: 10.1109/ias.2001.955445

Google Scholar

[6] Lades, M., thesis Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC, Technischen Universität München, (2000).

Google Scholar

[7] Jayant Baliga, B., Fundamentals of Power Semiconductor Devices, pp.25-27, (2008).

Google Scholar

[8] Roschke, M. and Schwierz, F.: Electron mobility models for 4H, 6H, and 3C SiC, Electron Devices, IEEE Transactions on, Jul (2001).

DOI: 10.1109/16.930664

Google Scholar