IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

Florian Chevalier; Javier Leon; X. Perpiña; Dominique Tournier; Xavier Jordá; Josep Montserrat; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.821-823.801

Paper Titles

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
p.785

VLS Grown 4H-SiC Buried P⁺ Layers for JFET Lateral Structures
p.789

4H-SiC VJFETs with Self-Aligned Contacts
p.793

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
p.797

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
p.801

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
p.806

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
p.814

Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
p.818

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IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

Abstract:

This paper deals with the geometry of a high voltage (1200 V) vertical JFET made with 4H silicon carbide, inspired by SIT or commercial solutions like Semisouth's one (principle exposed in Fig. 1). A first layout was designed allowing an easy integration of a free-wheeling diode. Indeed with the maturity of SiC JFET fabrication process, nowadays' trend is the high integration level of a complete power electronics system. This paper will focus on the distribution of the gate potential or the source current across the device and the relation that could be done with the switching delay. The measurements start with the classical I–V static characterization from room temperature till 225°C. After packaging the best dies, the switching behavior is studied. Gate bias and temperature dependence is also investigated. In order to fully understand the conducting/blocking or switching mechanisms, some further measurements using lock-in infrared thermography (LIRT) technique was led. Thus, with this complete characterization methodology the device layout can be improved.