4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes; Antonis Stavrinidis; George  Konstantinidis; Maria Kayambaki; Konstantinos Vamvoukakis; Emmanouil Vassakis; Konstantin Vasilevskiy; Alton B. Horsfall; Nick G. Wright; Pierre Brosselard; Shi Qin Niu; Mihai Lazar; Dominique Planson; Dominique Tournier; Nicolas Camara; Matthias Bucher

doi:10.4028/www.scientific.net/MSF.821-823.793

Paper Titles

Cryogenic Characterization of Commercial SiC Power MOSFETs
p.777

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design
p.781

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
p.785

VLS Grown 4H-SiC Buried P⁺ Layers for JFET Lateral Structures
p.789

4H-SiC VJFETs with Self-Aligned Contacts
p.793

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
p.797

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
p.801

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
p.806

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

HomeMaterials Science ForumMaterials Science Forum Vols. 821-8234H-SiC VJFETs with Self-Aligned Contacts

4H-SiC VJFETs with Self-Aligned Contacts

Abstract:

Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm) and its width (1.5-5μm). The transistors exhibited high current handling capabilities (Direct Current density 330A/cm²). The output current reduces with the increase of the measurements temperature due to the decrease of the electron mobility value. The voltage breakdown exhibits a triode shape, which is typical for a static-induction transistor operation.