The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

Pavel Hazdra; Stanislav Popelka; Vít Zahlava

doi:10.4028/www.scientific.net/MSF.821-823.785

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823The Influence of Neutron Irradiation on Electrical...

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

Abstract:

Commercial 1200V and 1700V MPS diodes and 1700V vertical JFETs produced on 4H-SiC n-type epilayers were neutron irradiated with fluences up to 4x10¹⁴ cm^-2 (1 MeV neutron equivalent Si). Radiation defects and their effect on carrier removal were investigated by capacitance deep-level transient spectroscopy, I-V and C-V measurement. Results show that neutron irradiation introduces different point defects giving rise to deep acceptor levels which compensate nitrogen doping of the epilayer. The carrier removal rate increases linearly with nitrogen doping. Introduced defects deteriorate ON-state characteristics of irradiated devices while their effect on blocking characteristics is negligible. The effect of neutron irradiation can be simulated by TCAD tools using a simple model accounting for introduction of one dominant deep level (Z1/Z2 centre).

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Materials Science Forum (Volumes 821-823)

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785-788

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.785

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Online since:

June 2015

Authors:

Pavel Hazdra*, Stanislav Popelka, Vít Zahlava

Keywords:

Neutrons, Radiation Defects

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