Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region

Shinsuke Harada; Makoto Kato; Megumi Shinozaki; Yusuke Kobayashi; Keiko Ariyoshi; Takahito Kojima; Mitsuru Sometani; Junji Senzaki; Yasunori Tanaka; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.769

Paper Titles

Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides
p.753

Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs
p.757

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
p.761

CIMOSFET: A New MOSFET on SiC with a Superior R_on·Q_gdFigure of Merit
p.765

Low R_ons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region
p.769

Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET Applications
p.773

Cryogenic Characterization of Commercial SiC Power MOSFETs
p.777

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design
p.781

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
p.785

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted...

Low R_ons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region

Abstract:

3kV UMOSFET with buried p-base regions was developed to realize the low on-resistance with low electric field in the gate oxide for off-state. The buried p-base region was formed simultaneously with the p-base region by utilizing MeV ion implantation. Influence by the structural parameter such as cell geometry and space between the buried p-base region and the trench gate was investigated. The hexagonal cell with high channel density exhibits an extremely low on-resistance of 6.8 mΩcm² with threshold voltage of 5.0 V at room temperature.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

769-772

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.769

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Online since:

June 2015

Authors:

Shinsuke Harada*, Makoto Kato, Megumi Shinozaki, Yusuke Kobayashi, Keiko Ariyoshi, Takahito Kojima, Mitsuru Sometani, Junji Senzaki, Yasunori Tanaka, Hajime Okumura

Keywords:

Buried P-Base Region, MeV Ion Implantation, On-Resistance, UMOSFET

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