Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors

Christian Bödeker; Sarah Rugen; Nando Kaminski

doi:10.4028/www.scientific.net/MSF.821-823.826

Paper Titles

Short-Circuit Capability Exploration of Silicon Carbide Devices
p.810

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
p.814

Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
p.818

Improvement of the Current Gain Stability of SiC Junction Transistors
p.822

Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors
p.826

Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
p.830

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges
p.834

4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
p.838

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
p.842

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Dynamic Voltage Rise Control (DVRC) Applied to SiC...

Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors

Abstract:

Considering the development of faster power electronic switches, especially silicon carbide (SiC) devices, parasitic elements, such as stray inductances and capacitances, become more and more crucial. Overvoltages caused by stray inductances in combination with fast switching transients can destroy the devices at turn-off. In this paper the implementation of the DVRC circuit for silicon carbide bipolar junction transistors (BJTs) is investigated. The DUT was Fairchild`s FSICBH057A120 (V_CES = 1200 V, R_on = 57 mΩ).

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

826-829

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.826

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Online since:

June 2015

Authors:

Christian Bödeker*, Sarah Rugen, Nando Kaminski

Keywords:

Bipolar Junction Transistor (BJT), Dynamic Voltage Rise Control, Fast Switching, Overvoltage, Parasitic Components, Protective Circuitry, Safe Operating Area, Switching Losses

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* - Corresponding Author

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