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Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

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Abstract:

Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

842-846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.842

Citation:

Cite this paper

Online since:

June 2015

Authors:

Yoshiyuki Yonezawa*, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, T. Deguchi, Tomohisa Kato, Shinsuke Harada, Yasunori Tanaka, Dai Okamoto, Mitsuru Sometani, M. Okamoto, M. Yoshikawa, T. Tsutsumi, Y. Sakai, N. Kumagai, S. Matsunaga, M. Takei, Masayuki Arai, T. Hatakeyama, K. Takao, T. Shinohe, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, M. Miyajima, H. Kimura, A. Otsuki, K. Fukuda, H. Okumura, T. Kimoto

Keywords:

Carrier Lifetime, IGBT, N-Channel, Ultra High Voltage

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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