Chemical Vapor Deposition of Boron Nitride Thin Films on SiC

Abstract:

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H₂ as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 990-994
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.990
• Online since: June 2015
• Authors: Mihail Chubarov, Henrik Pedersen, H. Högberg, Magnus Garbrecht, Zsolt Czigány, Sven G. Andersson, Anne Henry
• Keywords: Boron Nitride, CVD, Hexagonal, Insulating, Rhombohedral, Sp², XRD

References

[1] X.W. Zhang, Thin Solid Films 544 (2013) 2-12.

[2] K. Watanabe, T. Taniguchi and H. Kanda, Nature materials 3 (2004) 404-409.

[3] L. Britnell, R.V. Gorbachev, R. Jalil, B.D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M.I. Katsnelson, L. Eaves, S.V. Morozov, N.M.R. Peres, J. Leist, A.K. Geim, K.S. Novoselov and L.A. Ponomarenko, Science 335 (2012) 947-950.

DOI: 10.1126/science.1218461

[4] M.T. Alam, M.S. Bresnehan, J.A. Robinson and M.A. Haque, Appl. Phys. Lett. 104 (2014) 013113.

[5] A. Bath, P. J. v d Put, J. G. M. Becht, J. Schoonman and B. Lepley, J. Appl. Phys. 70 (1991) 4366-4370.

[6] M. Shanmugan, N. Jain, R. Jacobs-Gedrim, Y. Xu and B. Yu, Appl. Phys. Lett. 103 (2013) 243904.

[7] L.B. Ruppalt, S. Stafford, D. Yuan, K.A. Jones, M.H. Ervin, K.W. Kirchner, T.S. Zheleva, M.C. Wood, B.R. Geil and E. Forsythe, Solid-State Electronics 47 (2003) 253–257.

DOI: 10.1016/s0038-1101(02)00203-4

[8] M. Chubarov, H. Pedersen, H. Högberg, J. Jensen and A. Henry, Cryst. Growth Des. 12 (2012) 3215-3220.

[9] M. Chubarov, H. Pedersen, H. Högberg and A. Henry, CrystEngComm 15 (2013) 455-458.

[10] M. Chubarov, H. Pedersen, H. Högberg, Z. Czigany and A. Henry, CrystEngComm 16 (2014) 5430-5436.

DOI: 10.1039/c4ce00381k

[11] A. Henry, S. Leone, X. Li, J. Hassan, O. Kordina, J.P. Bergman and E. Janzén; e-Book Ch. 5 in Silicon Carbide Epitaxy, Ed. F. La Via, 2012, pp.95-117, Research Signpost, ISBN: 978-81-308-0500-9.

[12] M. Chubarov, H. Pedersen, H. Högberg, V. Darakchieva, J. Jensen, P.O.Å. Persson and A. Henry, Phys. Status Solidi RRL, 5 (2011) 397-399.

DOI: 10.1002/pssr.201105410

[13] Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto and N. Matsumoto, Jpn. J. Appl. Phys., 46 (2007) 2554–2557.

DOI: 10.1143/jjap.46.2554

[14] M. Brötzmann, H. -G. Gehrke, U. Vetter and H. Hofsäss, Appl. Phys. Lett. 97 (2010) 103505.

[15] S. Majety, J. Li, W.P. Zhao, B. Huang, S.H. Wei, J.Y. Lin and H.X. Jiang, Appl. Phys. Lett. 102 (2013) 213505.

[16] M. Chubarov, H. Pedersen, H. Högberg, S. Filippov, J.A.A. Engelbrecht and A. Henry, Physica B 439 (2014) 29-34.

DOI: 10.1016/j.physb.2013.10.068

[17] W. Auwarter, H.U. Suter, H. Sachdev and T. Greber, Chem. Mater. 16 (2004) 343-345.

[18] K.K. Kim, A. Hsu, X. Jia, S.M. Kim, Y. Shi, M. Hofmann, D. Nezich, J.F. Rodriguez-Nieva, M. Dresselhaus, T. Palacios and J. Kong, Nano Lett. 12 (2012) 161-166.

DOI: 10.1021/nl203249a

[19] S. Majety, T. C. Doan, J. Li, J. Y. Lin and H. X. Jiang AIP Advances 3 (2013) 122116.