Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

Rami Khazaka; Marc Portail; P. Vennéguès; Marcin Zielinski; Thierry Chassagne; Daniel Alquier; Jean François Michaud

doi:10.4028/www.scientific.net/MSF.821-823.978

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Silicon Growth on 3C-SiC(001)/Si(001): Pressure...

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

Abstract:

We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two distinct growth regimes. The defects in the films were found to be antiphase boundaries and μ-twins. The influence of the growth parameters as well as the 3CSiC structural properties on these defects are discussed. The impact of a subsequent thermal annealing, under different gas environments, is also investigated and reveals some noticeable differences according to the gas environment used in the annealing process.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

978-981

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.978

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Online since:

June 2015

Authors:

Rami Khazaka*, Marc Portail, P. Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean François Michaud

Keywords:

Cubic Silicon Carbide (3C-SiC), Heteroepitaxial Growth, Silicon, TEM

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