On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface

N. Chandran; Mamour Sall; Jarvan Arvanitidis; Dimitris Christofilos; Kassem Alassaad; Gabriel Ferro; Véronique Soulière; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.821-823.961

Paper Titles

RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates
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A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment
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Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition
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Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
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On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface
p.961

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE
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The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide
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Synthesis and Characterization of Al₄SiC₄: A “New” Wide Band Gap Semiconductor Material
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Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823On the Formation of Graphene by Ge Intercalation...

On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface

Abstract:

The present communication focuses on the bilayer graphene formation on a Ge doped 4H-SiC surface. The 4H-SiC epilayer was grown by CVD with Germane (GeH₄) as the dopant precursor. This easily leads to the formation of Ge islands as well as graphene on the 4H-SiC surface. The Ge island decorated surface was studied by Raman spectroscopy, XPS, and TEM. It was found that the bilayer graphene is free standing and that the native oxides act as a buffer layer on the surface, covering the Ge islands. The intensity variations of the Ge component in the XPS spectra indicate that Ge atoms can be buried in the SiC surface. The TEM analysis revealed that the graphene layers are in the form of flakes, which can also be rived vertically with the support of the Ge islands on SiC surface.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

961-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.961

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Online since:

June 2015

Authors:

N. Chandran, Mamour Sall, Jarvan Arvanitidis, Dimitris Christofilos, Kassem Alassaad, Gabriel Ferro, Véronique Soulière, Efstathios K. Polychroniadis

Keywords:

4H-SiC, Ge Intercalation, Ge Islands, Graphene, Raman Spectroscopy, TEM, XPS

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References

[1] T. Gorelik, U. Kaiser, C. Schubert, W. Wesch, U. Glatzel, J. Mater. Res., 17 (2002) 479-486.

DOI: 10.1557/jmr.2002.0067

Google Scholar

[2] G. Katulka, C. Guedj, J. Kolodzey, R.G. Wilson, C. Swann, M.W. Tsao, J. Rabolt, Appl. Phys. Lett., 74 (1999) 540-542.

DOI: 10.1063/1.123186

Google Scholar

[3] K. Alassaad, V. Soulière, F. Cauwet, H. Peyre, D. Carole, P. Kwasnicki, S. Juillaguet, T. Kups, J. Pezoldt, G. Ferro, Acta Materialia, 75 (2014) 219-226.

DOI: 10.1016/j.actamat.2014.04.057

Google Scholar

[4] K. Aït-Mansour, D. Dentel, L. Kubler, M. Diani, M. Derivaz, J.L. Bischoff, J. Phys. D: Appl. Phys., 40 (2007) 6225-6241.

DOI: 10.1088/0022-3727/40/20/s08

Google Scholar

[5] L.M. Malard, M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, Phys. Rep. 473 (2009) 51-87.

Google Scholar

[6] A.C. Ferrari, D.M. Basko, Nat. Nanotech., 8 (2013) 235-246.

Google Scholar

[7] F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda, A. Taleb-Ibrahimi, L.C. Feldman, P.I. Cohen, E.H. Conrad, Nano Lett., 13 (2013) 4827-4832.

DOI: 10.1021/nl402544n

Google Scholar

[8] K.V. Emtsev, F. Speck, T. Seyller, L. Ley, J.D. Riley, Phys. Rev. B, 77 (2008) 155303.

Google Scholar

[9] J.A. Carlisle, T. Miller, T.C. Chiang, Phys. Rev. B, 45 (1992) 3811-3814.

Google Scholar