Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)

Abstract:

Large-area epitaxial graphene formed on C-face SiC has been investigated by Raman Spectroscopy and SEM (scanning electron microscopy). Local Raman spectra showed a large homogeneous area of high quality epitaxial FLG (few layer graphene) has been fabricated on C-face SiC. Our work reveals unexpectedly the shift in Raman peak position across the samples resulting from the inhomogeneity in the strains and impurities of the graphene films, which we exhibit to be correlated with physical topography by combining Raman spectroscopy with scanning electron microscopy (SEM)

• Periodical: Materials Science Forum (Volumes 821-823)
• Pages: 957-960
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.821-823.957
• Online since: June 2015
• Authors: Yan Fei Hu, Hui Guo*, Yu Ming Zhang, Yi Men Zhang
• Keywords: Epitaxial Graphene, Raman Spectroscopy, Strain Uniformity

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