Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors

Julien Pezard; Jeremy Lhuillier; Zakarya El-Friach; Véronique Soulière; Bertrand Vilquin; Pedro Rojo Romeo; Mihai Lazar

doi:10.4028/www.scientific.net/MSF.821-823.941

Paper Titles

Nanoscale Dynamic Mechanical Analysis on Heat-Resistant Silsesquioxane Nanocomposite for Power-Device Packaging
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Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping
p.929

Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)
p.933

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates
p.937

Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors
p.941

RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates
p.945

A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment
p.949

Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition
p.953

Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
p.957

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Realization and Characterization of Graphene on...

Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors

Abstract:

Few layers graphene has been grown on 4H-SiC. Since this material has outstanding electronic properties, we aimed fabricating graphene field-effect transistors on silicon carbide wafer. Growth of the graphene layers was made by e-beam sublimation of silicium under ultra high vacuum (UHV). These layers were patterned and used as channels of transistors with source and drain made of P⁺ SiC. The different technological steps were checked through Raman spectroscopy, Scanning Electron Microscopy (SEM), and electrical characterizations.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

941-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.941

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Online since:

June 2015

Authors:

Julien Pezard, Jeremy Lhuillier, Zakarya El-Friach, Véronique Soulière, Bertrand Vilquin, Pedro Rojo Romeo, Mihai Lazar*

Keywords:

Electron-Beam Sublimation, Graphene, Tera Hertz Transistor

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