A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment

Yuichi Nagahisa; Yoshisige Tsuchiya; Eisuke Tokumitsu

doi:10.4028/www.scientific.net/MSF.821-823.949

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823A Study on Graphitization of 4H-SiC(0001) Surface...

A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment

Abstract:

Effects of residual oxygen in an annealing chamber on graphitization of SiC along with surface pre-treatment process have been investigated. As a pre-treatment process, SiO₂ was formed on 4H-SiC(0001) substrates by thermal oxidation before graphene formation annealing. Epitaxial graphenes were formed in several O₂ pressures and effects on graphitization of SiC were evaluated. It is shown that quality of graphene on SiC substrates which formed without pre-oxidation degraded by the presence of residual O₂ in the chamber. It is demonstrated that SiO₂ pre-oxidation films (about 10nm) were effective to prevent such degradations, for all O₂ pressures that we examined in this work. In addition, at O₂ pressure of 1.1x10^-1Pa, with SiO₂ pre-oxidation, a graphene growth rate was increased, which indicates that a certain level of O₂ pressure enhances graphene growth.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

949-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.949

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Online since:

June 2015

Authors:

Yuichi Nagahisa*, Yoshisige Tsuchiya, Eisuke Tokumitsu

Keywords:

4H-SiC, Graphene, Si-Face, SiO₂

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