Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Hee Jun Lee; Hee Tae Lee; Hee Won Shin; Mi Seon Park; Yeon Suk Jang; Won Jae Lee; Dong Yeob Kim; Soon Ku Hong; Jung Gon Kim

doi:10.4028/www.scientific.net/MSF.821-823.1007

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Effect of Various Crucibles for High Quality AIN...

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Abstract:

Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

1007-1010

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.1007

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Online since:

June 2015

Authors:

Hee Jun Lee, Hee Tae Lee, Hee Won Shin, Mi Seon Park, Yeon Suk Jang, Won Jae Lee*, Dong Yeob Kim, Soon Ku Hong, Jung Gon Kim

Keywords:

Aluminum Nitride (AlN), Crucible, Crystal Quality, PVT, SiC Seed

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