Paper Titles

X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon
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Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance
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Excited Defect Energy States from Temperature Dependent ESR
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Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy
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Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium
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Photoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates
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Paramagnetic Defects in SiC Based Materials
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Acceptors in Silicon Carbide: ODMR Data
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Luminescence and Absorption of Vanadium (V⁴⁺): In 6H-Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Transition Metals in Silicon Carbide (SiC):...

Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1183-1194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1183

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Online since:

January 1992

Authors:

Karin Maier, Harald D. Müller, J. Schneider

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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