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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Spin Dependent Recombination at Deep Centers in Si...

Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1165-1170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1165

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Online since:

January 1992

Authors:

P. Christmann, M. Bernauer, C. Wetzel, A. Asenov, B.K. Meyer, A. Endrös

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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