Paper Titles

Polarized Spectroscopy of Complex Luminescence Centers
p.1127

ONP Spectroscopy of Defects in Silicon
p.1135

Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors
p.1141

On the Analysis of Digital DLTS Data
p.1147

A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects
p.1153

X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon
p.1159

Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance
p.1165

Excited Defect Energy States from Temperature Dependent ESR
p.1171

Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy
p.1177

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87A Reevaluation of Electric-Field Enhanced Emission...

A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1153-1158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1153

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Online since:

January 1992

Authors:

W.R. Buchwald, Hermann G. Grimmeiss, F. Christopher Rong, N.M. Johnson, E.H. Poindexter, H. Pettersson

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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