Paper Titles

Muon Stopping Sites in Semiconductors from Decay-Positron Channeling
p.1121

Polarized Spectroscopy of Complex Luminescence Centers
p.1127

ONP Spectroscopy of Defects in Silicon
p.1135

Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors
p.1141

On the Analysis of Digital DLTS Data
p.1147

A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects
p.1153

X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon
p.1159

Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance
p.1165

Excited Defect Energy States from Temperature Dependent ESR
p.1171

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87On the Analysis of Digital DLTS Data

On the Analysis of Digital DLTS Data

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1147-1152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1147

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Online since:

January 1992

Authors:

C.A.B. Ball, A.B. Conibear

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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