Paper Titles

Identification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive Impurities
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Microscopy of Frenkel Pairs in Semiconductors by Nuclear Techniques
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Modern Muon Spectroscopic Methods in Semiconductor Physics
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Muon Stopping Sites in Semiconductors from Decay-Positron Channeling
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Polarized Spectroscopy of Complex Luminescence Centers
p.1127

ONP Spectroscopy of Defects in Silicon
p.1135

Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors
p.1141

On the Analysis of Digital DLTS Data
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A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Polarized Spectroscopy of Complex Luminescence...

Polarized Spectroscopy of Complex Luminescence Centers

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1127-1134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1127

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Online since:

January 1992

Authors:

Sergei S. Ostapenko, Moissei K. Sheinkman

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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