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A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects
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X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon
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Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance
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Excited Defect Energy States from Temperature Dependent ESR
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Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy
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Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium
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Photoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates
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Paramagnetic Defects in SiC Based Materials
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Dislocation Associated Defects in Gallium Arsenide...

Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1177-1182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1177

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Online since:

January 1992

Authors:

O. Siboulet, S. Gauthier, J.C. Girard, W. Sacks, S. Rousset, J. Klein

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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