Paper Titles

Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
p.1503

High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
p.1509

The Properties of Individual Si/SiO₂ Defects and Their Link to 1/F Noise
p.1519

Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells
p.1531

A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance
p.1539

Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes
p.1545

Recombination-Enhanced Diffusion of Be in GaAs
p.1551

Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors
p.1557

Effects of the Substrate-Epitaxial Layer Interface on the DLTS Spectra in MESFET and HFET Devices
p.1563

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87A Study of Radiation Induced Defects in Silicon...

A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1539-1544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1539

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Online since:

January 1992

Authors:

Jan Peters, Tomas Markvart, Arthur F.W. Willoughby

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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