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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87High Temperature Defect-Free Rapid Thermal...

High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1509-1518

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1509

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Online since:

January 1992

Authors:

A. Katz, A. Feingold, Stephen J. Pearton, M. Geva, S. Nakahara, E. Lane

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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