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Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
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High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
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Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87The Properties of Individual Si/SiO2 Defects and...

The Properties of Individual Si/SiO₂ Defects and Their Link to 1/F Noise

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1519-1530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1519

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Online since:

January 1992

Authors:

Michael J. Uren

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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