Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1545-1550

DOI:

10.4028/www.scientific.net/MSF.83-87.1545

Citation:

J. M. Langer and P. Revva, "Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes", Materials Science Forum, Vols. 83-87, pp. 1545-1550, 1992

Online since:

January 1992

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