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High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
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The Properties of Individual Si/SiO₂ Defects and Their Link to 1/F Noise
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Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells
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A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance
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Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes
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Recombination-Enhanced Diffusion of Be in GaAs
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Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors
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Effects of the Substrate-Epitaxial Layer Interface on the DLTS Spectra in MESFET and HFET Devices
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The Study of Interfacial Traps of InP Metal-Insulator-Semiconductor Stuctures
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87The Study of Interfacial Traps of InP...

The Study of Interfacial Traps of InP Metal-Insulator-Semiconductor Stuctures

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1569-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1569

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Online since:

January 1992

Authors:

L. Lu, J. Zhou, W. Qu, S. Zhang

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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