Paper Titles

Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
p.1469

Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
p.1475

Annealing of Damage in GaAs and InP after Implantation of Cd and In
p.1481

Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films
p.1487

Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
p.1493

Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
p.1499

Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
p.1503

High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient
p.1509

The Properties of Individual Si/SiO₂ Defects and Their Link to 1/F Noise
p.1519

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Observation of a Trivalent Ge Defect in Oxygen...

Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1493-1498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1493

Citation:

Cite this paper

Online since:

January 1992

Authors:

Mary Ellen Zvanut, W.E. Carlos, Mark E. Twigg, Robert E. Stahlbush, D.J. Godbey

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: