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Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon
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Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon
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Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
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Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
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Annealing of Damage in GaAs and InP after Implantation of Cd and In
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Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films
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Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
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Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Morphology Change of Oxygen Precipitates in Cz-Si...

Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1475-1480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1475

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Online since:

January 1992

Authors:

Mitsuhiro Hasebe, James W. Corbett, Kazuto Kawakami

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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