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Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
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Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
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Annealing of Damage in GaAs and InP after Implantation of Cd and In
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Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films
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Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
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Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
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Enhanced-Diffusion in Electron-Beam Doping of Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Annealing of Damage in GaAs and InP after...

Annealing of Damage in GaAs and InP after Implantation of Cd and In

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1481-1486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1481

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Online since:

January 1992

Authors:

Wulf Pfeiffer, Manfred Deicher, R. Kalish, R. Keller, R. Magerle, N. Moriya, P. Pross, H. Skudlik, Th. Wichert, Herbert Wolf

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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