Paper Titles

Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
p.1445

An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon
p.1451

Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon
p.1457

Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon
p.1463

Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
p.1469

Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
p.1475

Annealing of Damage in GaAs and InP after Implantation of Cd and In
p.1481

Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films
p.1487

Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys
p.1493

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Study of Internal Oxide Gettering for CZ Silicon:...

Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1469-1474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1469

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Online since:

January 1992

Authors:

Z. Laczik, G.R. Booker, Robert J. Falster, Péter Török

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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