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¹⁷O Hyperfine Study of the P_b Center
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Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
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Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors
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Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
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An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon
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Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon
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Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Photoluminescence Characterisation of the Silicon...

Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1445-1450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1445

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Online since:

January 1992

Authors:

Anne Henry, Bo Monemar, J. Lennart Lindström, T.D. Bestwick, G.S. Oehrlein

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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