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0 Surrounding of P_b Defects at the (111)Si/SiO₂ Interface
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¹⁷O Hyperfine Study of the P_b Center
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Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si0₂ Interface
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Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
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Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors
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Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
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An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Interstitial Defect Reactions in Silicon Processed...

Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1433-1438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1433

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Online since:

January 1992

Authors:

J.L. Benton, M.A. Kennedy, Jürgen Michel, Lionel C. Kimerling

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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