Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1433-1438

DOI:

10.4028/www.scientific.net/MSF.83-87.1433

Citation:

J.L. Benton et al., "Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching", Materials Science Forum, Vols. 83-87, pp. 1433-1438, 1992

Online since:

January 1992

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$35.00

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