An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1451-1456

Citation:

W.J. Taylor et al., "An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon", Materials Science Forum, Vols. 83-87, pp. 1451-1456, 1992

Online since:

January 1992

Export:

Price:

$38.00