An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1451-1456

DOI:

10.4028/www.scientific.net/MSF.83-87.1451

Citation:

W.J. Taylor et al., "An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon", Materials Science Forum, Vols. 83-87, pp. 1451-1456, 1992

Online since:

January 1992

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$38.00

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