Paper Titles

Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si0₂ Interface
p.1427

Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
p.1433

Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors
p.1439

Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment
p.1445

An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon
p.1451

Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon
p.1457

Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon
p.1463

Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel
p.1469

Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment
p.1475

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87An Analysis of Point Defect Fluxes during SiO2...

An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1451-1456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1451

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Online since:

January 1992

Authors:

W.J. Taylor, T.Y. Tan, U.M. Gösele

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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