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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Electrical Properties of Oxidation-Induced...

Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1463-1468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1463

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Online since:

January 1992

Authors:

J. Kaniewski, M. Kaniewska, Anthony R. Peaker

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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