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Vols. 83-87
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Materials Science Forum Vols. 83-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87

ToC:

Table of Contents

Paper Title Page

Effects of Hydrogen in Si-Doped AlAs
Authors: E. Tuncel, H. Sigg, E. Meier, L. Pavesi, Paolo Giannozzi, D.M. Martin, F. Morier-Genoud, F.K. Reinhart
635
Energy Transfer in Rare-Earth-Doped III-V Semiconductors
Authors: Kenichiro Takahei, Akihito Taguchi
641
Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
Authors: Jürgen Michel, Lionel C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante
653
Theory of Substitutional Rare Earth Impurities in Semiconductors
Authors: Christian Delerue, Michel Lannoo
659
Spectroscopic Investigation of the Er Site in GaAs:Er
Authors: Paul B. Klein, F.G. Moore, H.B. Dietrich
665
Excitation Mechanism of the Erbium 4F Emissions in GaAs
Authors: J.E. Colon, D.W. Elsaesser, Y.K. Yeo, R.L. Hengehold, G.S. Pomrenke
671
Electrical Properties of Yb, Er Doped InP
Authors: D. Seghier, Taha Benyattou, G. Bremond, Frédérique Ducroquet, Jean-Jacques Marchand, Gérard Guillot, Christophe Lhomer, Bertrand Lambert, Yves Toudic, Alain Le Corre
677
Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP
Authors: Marek Godlewski, B.J. Heijmink Liesert, T. Gregorkiewicz, C.A.J. Ammerlaan
683
Photoluminescent Properties of Yb Doped InAsP Alloys
Authors: A.J. Neuhalfen, D.M. Williams, Bruce W. Wessels
689
FTIR High Resolution Optical Study of GaAs:Fe
Authors: Klaus Pressel, G. Rückert, Klaus Thonke, Achim Dörnen
695

Showing 101 to 110 of 242 Paper Titles