Matrix Nuclear Radiation GaAs Detectors Simulation

Eketerina Tokareva; Gennadiy Koltsov; Nurnaz Burtebaev; Sergey Didenko; Sergey Legotin; Oleg Rabinovich

doi:10.4028/www.scientific.net/MSF.845.154

Paper Titles

First Principles Study of the Structural and Magnetic Properties of Cr-Doped Ni_1.75Co_0.25Mn_1.5In_0.5 Heusler Alloys
p.138

Simulation of Control System for Shape Memory Nanotweezers
p.142

Simulation of the Electric Current Flow in Amorphous-Crystalline Ti₂NiCu Alloy with Shape Memory Effect
p.146

Zeros of Partition Function and Critical Exponents of the 3D Diluted Ising Model
p.150

Matrix Nuclear Radiation GaAs Detectors Simulation
p.154

Monte Carlo Modelling of Phase Transitions in Quasi-One-Dimensional Multiferoic
p.158

Density of States of Co- and Cr-Doped Ni_2.0Mn_1.5Sn_0.5 Heusler Alloys
p.162

Modeling of Phase Transitions Kinetics in Systems with Two Interacting Order Parameters
p.166

Mixed Control Problem for the Linearized Quasi-Stationary Phase Field System of Equations
p.170

HomeMaterials Science ForumMaterials Science Forum Vol. 845Matrix Nuclear Radiation GaAs Detectors Simulation

Matrix Nuclear Radiation GaAs Detectors Simulation

Abstract:

Using computer programs Elmer FEM Solver for calculating electric fields and Geant4 for the passage simulation of particles through matter, calculations of charge collection efficiency for nuclear radiation matrix detector based on GaAs p-i-n diodes with different distances between pixels 110 microns and 50 microns were made. Based on data obtained detector structure optimization solution, which improves energy resolution, is proposed.

You might also be interested in these eBooks

Phase Transitions, Critical and Nonlinear Phenomena in Condensed Matter

View Preview

Info:

Periodical:

Materials Science Forum (Volume 845)

Pages:

154-157

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.845.154

Citation:

Cite this paper

Online since:

March 2016

Authors:

Eketerina Tokareva, Gennadiy Koltsov, Nurnaz Burtebaev, Sergey Didenko, Sergey Legotin, Oleg Rabinovich*

Keywords:

Charge Collection Efficiency, Gallium Arsenide, Semiconductor Nuclear Detector, Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] D.L. Volkov, V.N. Murashev, S.A. Legotin, et al A new position-sensitive silicon pixel detector based on bipolar transistors Instruments and Experimental Techniques. 52(5) 2009. 655-664.

DOI: 10.1134/s0020441209050042

Google Scholar

[2] V.N. Murashev, S.A. Legotin, O.M. Orlov, A.S. Korol'Chenko, P.A. Ivshin A silicon position-sensitive detector of charged particles and radiations on the basis of functionally integrated structures with nano-micron active regions Instruments and Experimental Techniques. 53(5). (2010).

DOI: 10.1134/s0020441210050076

Google Scholar

[3] V. N. Murashev, S.A. Legotin, D.E. Karmanov, S.I. Didenko et. al., Monolithic ionizing particle detector based on active matrix of functionally integrated structures, Journal of Alloys and Compounds, 586(1) (2014), 553-S557.

DOI: 10.1016/j.jallcom.2013.04.032

Google Scholar

[4] S.A. Legotin, V.N. Murashev, S.I. Didenko, O.I. Rabinovich, D.S. Elnikov, A.A. Krasnov, M.A. Bazalevsky, G.I. Koltsov, K.A. Kuzmina, Monolithic silicon photodetector - Detector of ionizing radiation based on functional integrated MOS structures, Journal of Nano- and Electronic Physics, 6(3), (2014).

Google Scholar

[5] A.V. Chernykh, S.V. Chernykh, S.I. Didenko, G.I. Koltsov, F.M. Baryshnikov, G.I. Britvich, M. Yu. Kostin, A.P. Chubenko, V.G. Guly, Yu.N. Sveshnikov et. al., Fast neutron detector based on surface-barrier VPE GaAs structures, Journal of Instrumentation 10, (2015).

DOI: 10.1088/1748-0221/10/01/c01021

Google Scholar