Nucleation of Multicrystalline Silicon during Directional Solidification

Ping Bi; Xiu Hua Chen; Wen Hui Ma; Cong Zhang; Kui Xian Wei; Yu Ping Li; Xue Mei Liu

doi:10.4028/www.scientific.net/MSF.847.103

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HomeMaterials Science ForumMaterials Science Forum Vol. 847Nucleation of Multicrystalline Silicon during...

Nucleation of Multicrystalline Silicon during Directional Solidification

Abstract:

In this work, directional solidification was performed for multicrystalline silicon (mc-Si) ingot casting. The initial nucleation at the bottom of the silicon melt could be controlled by changing the cooling rate from 9 to 20μm/s. Metallographic microscope, X-Ray Diffraction (XRD), Microwave photoconductivity decay meter (μ-PCD) and four-point probe resistivity tester were used to investigate the microstructure, crystal orientation and electrical properties of the mc-Si ingots. The obtained results showed that cooling rate at 17μm/s is the optimum condition for the mc-Si ingots casting, under which the prepared ingot has lower dislocation density of 6×10^-3cm^-2, better electrical properties, more uniformer resistivity distribution with an average value of 0.68 Ω×cm and higher minority carrier lifetime with a maximum value of 1.8 μs than that of in the other cooling rate conditions.

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Periodical:

Materials Science Forum (Volume 847)

Pages:

103-108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.847.103

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Online since:

March 2016

Authors:

Ping Bi, Xiu Hua Chen*, Wen Hui Ma, Cong Zhang, Kui Xian Wei, Yu Ping Li, Xue Mei Liu

Keywords:

Crystal Quality, Directional Solidification, Electrical Properties, Multicrystalline Silicon, Nucleation

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