Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

Abstract:

The performance of phase change memory (PCM) cell, based on Ti_0.5Sb₂Te₃, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.

• Periodical: Materials Science Forum (Volume 848)
• Pages: 425-429
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.848.425
• Online since: March 2016
• Authors: Zhong Hua Zhang, San Nian Song, Zhi Tang Song, Le Li, Lan Lan Shen, Tian Qi Guo, Yan Cheng, Shi Long Lv, Liang Cai Wu, Bo Liu, Song Lin Feng
• Keywords: Buffer Layer, Phase Change Memory, Semiconductor, Tantalum Pentoxide, Thin Films, Ti_0.5Sb₂Te₃

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